Optical Characterization of Quantum Dot Intermediate Band Solar Cells

In this paper we present an optical characterization for quantum dot intermediate band solar cells (QDIBSCs). The cells were developed by growing a stack of ten InAs/GaAs QDs layers between p and n doped GaAs conventional emitters. Electroluminescence, EL, photoreflectance, PR, and transmission electron microscopy, TEM, were applied to the samples in order to test and characterize them optically. The results, derived from the application of the different techniques, showed a good correlation. TEM images revealed a very good structural quality of the QDs, which seem to evolve in shape-strain from the bottom to the top of the stack. Corresponding to the quality observed by TEM, strong signals from EL and PR resolved unambiguously the energy band diagram of the QDIBSCs. By fitting PR data we were able to indentify the coexistence of bands and discrete energy levels coming from the IB material. The PR data evidenced also a strong electric field over the dots, attributed to the space charge region created between the p-n emitters sandwiching the IB material. From EL results, we identified the predominantly radiative nature of the IB material related energy transitions.